Samsung M3 78T2953EZ3-CF7 1GB vs Transcend Information JM2666HSB-8G 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Transcend Information JM2666HSB-8G 8GB

Transcend Information JM2666HSB-8G 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值

Transcend Information JM2666HSB-8G 8GB

需要考虑的原因
Transcend Information JM2666HSB-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 58

左右 -87% 更低的延时
更快的写入速度，GB/s

11.8 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Transcend Information JM2666HSB-8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 31
读取速度，GB/s

4,241.0 14.5
写入速度，GB/s

1,950.7 11.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BA1339.C16F 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Corsair CMU32GX4M2A2666C16 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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SK Hynix HYMP112U64CP8-S5 1GB

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