Samsung M3 78T3354BZ0-CCC 256MB vs A-DATA Technology AO2P32NCSV1-BEVS 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.5

测试中的平均数值

A-DATA Technology AO2P32NCSV1-BEVS 16GB

需要考虑的原因
A-DATA Technology AO2P32NCSV1-BEVS 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 46

左右 -18% 更低的延时
更快的写入速度，GB/s

9.1 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 39
读取速度，GB/s

2,909.8 17.5
写入速度，GB/s

1,519.2 9.1
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMR32GX4M2C3000C16 16GB

Corsair CMR32GX4M2C3000C16 16GB

AMD R5S38G1601U2S 8GB

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Mushkin 99[2/7/4]191[F/T] 4GB

Mushkin 99[2/7/4]191[F/T] 4GB

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Kingston 9905471-001.A01LF 2GB

Kingston KHX3200C20S4/8G 8GB

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Samsung M393B5170FH0-CK0 4GB

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Micron Technology 9ASF1G72AZ-2G3B1 8GB