Samsung M3 78T3354BZ0-CCC 256MB vs AMD R744G2606U1S 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 76

左右 39% 更低的延时
更快的读取速度，GB/s

2 15.7

测试中的平均数值

AMD R744G2606U1S 4GB

需要考虑的原因
AMD R744G2606U1S 4GB

报告一个错误

更快的写入速度，GB/s

8.7 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

AMD R744G2606U1S 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 76
读取速度，GB/s

2,909.8 15.7
写入速度，GB/s

1,519.2 8.7
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Transcend Information JM3200HSE-32G 32GB

Transcend Information JM3200HSE-32G 32GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F4-3466C16-4GVK 4GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Patriot Memory (PDP Systems) PSD44G266682 4GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

Crucial Technology BL16G32C16U4RL.M8FB1 16GB

SK Hynix HMT351S6BFR8C-H9 4GB

SK Hynix HMT351S6BFR8C-H9 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB