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Samsung M3 78T3354BZ0-CCC 256MB
Corsair CM4B16G4J2400A16K2-O 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CM4B16G4J2400A16K2-O 16GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Corsair CM4B16G4J2400A16K2-O 16GB

Corsair CM4B16G4J2400A16K2-O 16GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.2
    测试中的平均数值
Corsair CM4B16G4J2400A16K2-O 16GB 需要考虑的原因
Corsair CM4B16G4J2400A16K2-O 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 46
    左右 -109% 更低的延时
  • 更快的写入速度，GB/s
    13.6 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 3200
    左右 6 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CM4B16G4J2400A16K2-O 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 22
  • 读取速度，GB/s
    2,909.8 left arrow 18.2
  • 写入速度，GB/s
    1,519.2 left arrow 13.6
  • 内存带宽，mbps
    3200 left arrow 19200
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    241 left arrow 3297

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Corsair CM4B16G4J2400A16K2-O 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CM4B16G4J2400A16K2-O 16GB
Corsair CM4B16G4J2400A16K2-O 16GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston 9905713-008.A00G 4GB
Kingston 9905713-008.A00G 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Cortus SAS 8ATF1G64AZ-2G6E1 8GB
Cortus SAS 8ATF1G64AZ-2G6E1 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kllisre M471A1K43CB1-CTD 8GB
Kllisre M471A1K43CB1-CTD 8GB
内存RAM
Apacer Technology 78.C1GET.9K10C 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A4K40CB2-CTD 32GB
Samsung M393A4K40CB2-CTD 32GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-4000C18-32GTRS 32GB
G Skill Intl F4-4000C18-32GTRS 32GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston XJ69DF-MIE2 8GB
Kingston XJ69DF-MIE2 8GB
内存RAM