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Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL16G32C16U4B.16FE 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BL16G32C16U4B.16FE 16GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Crucial Technology BL16G32C16U4B.16FE 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
Crucial Technology BL16G32C16U4B.16FE 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4B.16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 46
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    20 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 3200
    左右 6.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL16G32C16U4B.16FE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 29
  • 读取速度，GB/s
    2,909.8 left arrow 20.0
  • 写入速度，GB/s
    1,519.2 left arrow 15.9
  • 内存带宽，mbps
    3200 left arrow 21300
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    241 left arrow 3713

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Crucial Technology BL16G32C16U4B.16FE 16GB RAM的比较

Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Golden Empire CL18-20-20 D4-3200 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
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Crucial Technology BL16G32C16U4B.16FE 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
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内存RAM
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内存RAM
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内存RAM
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Essencore Limited KD48GU88C-26N1600 8GB
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Kingston KF2666C16D4/8G 8GB
内存RAM