Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 18.4

测试中的平均数值

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 46

左右 -77% 更低的延时
更快的写入速度，GB/s

16.4 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 26
读取速度，GB/s

2,909.8 18.4
写入速度，GB/s

1,519.2 16.4
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 3825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 99U5595-005.A00LF 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Samsung M378B5173BH0-CH9 4GB

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Mushkin 99[2/7/4]200[F/T] 8GB

Mushkin 99[2/7/4]200[F/T] 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

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Chun Well Technology Holding Limited MD4U0836165BCW 8GB