Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BLS4G4D240FSA.8FAR 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology BLS4G4D240FSA.8FAR 4GB

Crucial Technology BLS4G4D240FSA.8FAR 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 15.7

测试中的平均数值

Crucial Technology BLS4G4D240FSA.8FAR 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSA.8FAR 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 46

左右 -84% 更低的延时
更快的写入速度，GB/s

11.6 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS4G4D240FSA.8FAR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 25
读取速度，GB/s

2,909.8 15.7
写入速度，GB/s

1,519.2 11.6
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2756

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F4-3000C16-16GSXFB 16GB

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Kingston 99U5700-010.A00G 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK32GX4M4A2800C16 8GB

Corsair CMK32GX4M4A2800C16 8GB