RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BLS4G4D240FSE.8FBD2 4GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
16.4
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
46
左右 -100% 更低的延时
更快的写入速度,GB/s
12.3
1,519.2
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
23
读取速度,GB/s
2,909.8
16.4
写入速度,GB/s
1,519.2
12.3
内存带宽,mbps
3200
19200
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
241
2723
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Crucial Technology BLS4G4D240FSE.8FBD2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T5663RZ3-CE6 2GB
Jinyu 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited IM44GU48N26-FFFHM 4GB
Crucial Technology CT2K102464BD160B 8GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Apacer Technology 78.01G86.9H50C 1GB
SK Hynix HMA851S6CJR6N-VK 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Kingston HX424C15FB/8 8GB
A-DATA Technology DQVE1908 512MB
Kingston KF3600C18D4/32GX 32GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Hexon Technology Pte Ltd HEXON 1GB
V-GEN D4M8GL26A8TS6 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M471A1G44BB0-CWE 8GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-4000C15-8GTZR 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston 9965600-018.A00G 16GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Kingston KVR800D2N6/2G 2GB
Kingston KTC2G-UDIMM 2GB
报告一个错误
×
Bug description
Source link