Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology BLS8G4D26BFSEK.8FD 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 16.6

测试中的平均数值

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSEK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 46

左右 -44% 更低的延时
更快的写入速度，GB/s

13.8 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 32
读取速度，GB/s

2,909.8 16.6
写入速度，GB/s

1,519.2 13.8
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 3277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F4-2666C15-4GVR 4GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Apacer Technology 78.01G86.9H50C 1GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

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Crucial Technology CT8G4SFS824A.M8FD 8GB

Kingston 99U5403-492.A00LF 8GB

Kingston 99U5403-492.A00LF 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

Crucial Technology CT102464BF160B.16F 8GB

Crucial Technology CT102464BF160B.16F 8GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB