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Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CB8GU2400.C8ET 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CB8GU2400.C8ET 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 58
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    2 left arrow 13.8
    测试中的平均数值
Crucial Technology CB8GU2400.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GU2400.C8ET 8GB
报告一个错误
  • 更快的写入速度，GB/s
    6.7 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 3200
    左右 6 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CB8GU2400.C8ET 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 58
  • 读取速度，GB/s
    2,909.8 left arrow 13.8
  • 写入速度，GB/s
    1,519.2 left arrow 6.7
  • 内存带宽，mbps
    3200 left arrow 19200
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    241 left arrow 1740

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Crucial Technology CB8GU2400.C8ET 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CB8GU2400.C8ET 8GB
Crucial Technology CB8GU2400.C8ET 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Corsair CM4B8G1J2400A16K2-ON 8GB
Corsair CM4B8G1J2400A16K2-ON 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Corsair CMV8GX4M1L2400C16 8GB
Corsair CMV8GX4M1L2400C16 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMW64GX4M2D3600C18 32GB
Corsair CMW64GX4M2D3600C18 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung SH5724G4UNC26P2-SC 32GB
Samsung SH5724G4UNC26P2-SC 32GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F4-3000C15-8GVR 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-3733C17-16GTZSW 16GB
G Skill Intl F4-3733C17-16GTZSW 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston XJV223-MIE-NX 16GB
Kingston XJV223-MIE-NX 16GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905700-017.A00G 8GB
Kingston 9905700-017.A00G 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
SK Hynix HMA42GR7MFR4N-TF 16GB
SK Hynix HMA42GR7MFR4N-TF 16GB
内存RAM