Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-2933C14-8GTZRX 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 54

左右 15% 更低的延时
更快的读取速度，GB/s

2 17.5

测试中的平均数值

G Skill Intl F4-2933C14-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-2933C14-8GTZRX 8GB

报告一个错误

更快的写入速度，GB/s

9.3 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2933C14-8GTZRX 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 54
读取速度，GB/s

2,909.8 17.5
写入速度，GB/s

1,519.2 9.3
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-140.A00LF 8GB

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Crucial Technology BLT4G4D26AFTA.8FADG 4GB

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Samsung M471B5173DB0-YK0 4GB

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Kingston KF3200C16D4/32GX 32GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

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Crucial Technology CT102464BF160B.C16 8GB

Corsair CMK16GX4M2Z3600C20 8GB

Corsair CMK16GX4M2Z3600C20 8GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 9905624-043.A00G 8GB

Kingston 9905624-043.A00G 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3200C16-16GTZSW 16GB

G Skill Intl F4-3200C16-16GTZSW 16GB