Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-3333C16-16GTZKW 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.2

测试中的平均数值

G Skill Intl F4-3333C16-16GTZKW 16GB

需要考虑的原因
G Skill Intl F4-3333C16-16GTZKW 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 46

左右 -100% 更低的延时
更快的写入速度，GB/s

12.9 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3333C16-16GTZKW 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 23
读取速度，GB/s

2,909.8 17.2
写入速度，GB/s

1,519.2 12.9
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 3227

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston 9965600-012.A01G 16GB

Kingston 9965600-012.A01G 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9905678-102.A00G 8GB

Kingston 9905678-102.A00G 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

G Skill Intl F4-3600C16-8GTZNC 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMR16GX4M2C3600C18 8GB

Corsair CMR16GX4M2C3600C18 8GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Apacer Technology GD2.1527WE.001 8GB

Apacer Technology GD2.1527WE.001 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston KYXC0V-MID 16GB

Kingston KYXC0V-MID 16GB