Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-4000C16-16GTZR 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-4000C16-16GTZR 16GB

G Skill Intl F4-4000C16-16GTZR 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

G Skill Intl F4-4000C16-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-4000C16-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 46

左右 -92% 更低的延时
更快的读取速度，GB/s

20.3 2

测试中的平均数值
更快的写入速度，GB/s

17.8 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-4000C16-16GTZR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 24
读取速度，GB/s

2,909.8 20.3
写入速度，GB/s

1,519.2 17.8
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 4122

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905469-143.A00LF 4GB

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Corsair CML16GX3M2A1600C10 8GB

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G Skill Intl F4-3200C22-32GRS 32GB

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Crucial Technology CT4G4DFS824A.M8FF 4GB

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Crucial Technology CT25664AA800.M16FM 2GB

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G Skill Intl F4-3200C16-32GTZN 32GB

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Micron Technology 9ASF1G72AZ-2G3B1 8GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT8G4SFS824A.C8FJ 8GB

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Kingston 99U5458-002.A00LF 2GB

Kingston 99U5458-002.A00LF 2GB

G Skill Intl F4-2800C16-4GVR 4GB

G Skill Intl F4-2800C16-4GVR 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Crucial Technology CT8G4SFD824A.C16FHP 8GB

Crucial Technology CT8G4SFD824A.C16FHP 8GB