Samsung M3 78T3354BZ0-CCC 256MB vs Kingmax Semiconductor GZAG43F-18---------- 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingmax Semiconductor GZAG43F-18---------- 8GB

Kingmax Semiconductor GZAG43F-18---------- 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 71

左右 35% 更低的延时

Kingmax Semiconductor GZAG43F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GZAG43F-18---------- 8GB

报告一个错误

更快的读取速度，GB/s

9.1 2

测试中的平均数值
更快的写入速度，GB/s

6.4 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingmax Semiconductor GZAG43F-18---------- 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 71
读取速度，GB/s

2,909.8 9.1
写入速度，GB/s

1,519.2 6.4
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 1484

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

Crucial Technology CT16G4SFD824A.C16FHD 16GB

A-DATA Technology AD73I1C1674EV 4GB

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G Skill Intl F3-1600C11-4GIS 4GB

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G Skill Intl F4-3000C14-16GVKD 16GB