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Samsung M3 78T3354BZ0-CCC 256MB
Kingston 99U5713-002.A00G 4GB

Samsung M3 78T3354BZ0-CCC 256MB vs Kingston 99U5713-002.A00G 4GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Kingston 99U5713-002.A00G 4GB

Kingston 99U5713-002.A00G 4GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.4
    测试中的平均数值
Kingston 99U5713-002.A00G 4GB 需要考虑的原因
Kingston 99U5713-002.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 46
    左右 -100% 更低的延时
  • 更快的写入速度，GB/s
    11.7 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 3200
    左右 6.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 99U5713-002.A00G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 23
  • 读取速度，GB/s
    2,909.8 left arrow 16.4
  • 写入速度，GB/s
    1,519.2 left arrow 11.7
  • 内存带宽，mbps
    3200 left arrow 21300
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2605

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Kingston 99U5713-002.A00G 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston 99U5713-002.A00G 4GB
Kingston 99U5713-002.A00G 4GB
内存RAM
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Samsung M393B2G70BH0-CH9 16GB
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内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
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A-DATA Technology AO1P32NC8W1-BDAS 8GB
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AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Kingston KHX2666C13/8GX 8GB
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A-DATA Technology DQVE1908 512MB
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Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
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Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Kingston MSI24D4S7D8MHMH6 16GB
Kingston MSI24D4S7D8MHMH6 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
内存RAM
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SK Hynix HMT451S6BFR8A-PB 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
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Kingston 9905403-156.A00LF 2GB
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G Skill Intl F4-3400C16-16GVK 16GB
内存RAM
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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SK Hynix HMA81GR7AFR8N-VK 8GB
内存RAM
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Samsung M378A1K43EB2-CWE 8GB
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Kingston 9905744-062.A00G 32GB
内存RAM
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Samsung M471B5773DH0-CK0 2GB
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Kingston 9905702-019.A00G 8GB
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