Samsung M3 78T3354BZ0-CCC 256MB vs Kingston KF3200C20S4/16G 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingston KF3200C20S4/16G 16GB

Kingston KF3200C20S4/16G 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 48

左右 4% 更低的延时
更快的读取速度，GB/s

2 16.8

测试中的平均数值

Kingston KF3200C20S4/16G 16GB

需要考虑的原因
Kingston KF3200C20S4/16G 16GB

报告一个错误

更快的写入速度，GB/s

13.6 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingston KF3200C20S4/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 48
读取速度，GB/s

2,909.8 16.8
写入速度，GB/s

1,519.2 13.6
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 2895

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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V-GEN D4H8GS24A8 8GB