Samsung M3 78T3354BZ0-CCC 256MB vs Kingston KHX2400C1C14/16G 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingston KHX2400C1C14/16G 16GB

Kingston KHX2400C1C14/16G 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 15.6

测试中的平均数值

Kingston KHX2400C1C14/16G 16GB

需要考虑的原因
Kingston KHX2400C1C14/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 46

左右 -53% 更低的延时
更快的写入速度，GB/s

7.9 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingston KHX2400C1C14/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 30
读取速度，GB/s

2,909.8 15.6
写入速度，GB/s

1,519.2 7.9
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2244

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW64GX4M8C3000C15 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Crucial Technology BLS16G4D240FSE.16FD 16GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Samsung M471A1G44BB0-CWE 8GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

G Skill Intl F4-2666C15-8GVS 8GB

G Skill Intl F4-2666C15-8GVS 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMW32GX4M4K4266C19 8GB

Corsair CMW32GX4M4K4266C19 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Kingston 9965684-013.A00G 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Apacer Technology 78.CAGP7.AZ20B 8GB

Apacer Technology 78.CAGP7.AZ20B 8GB