Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology 16ATF2G64AZ-2G1B1 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 14.1

测试中的平均数值

Micron Technology 16ATF2G64AZ-2G1B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G1B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更快的写入速度，GB/s

9.0 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

2,909.8 14.1
写入速度，GB/s

1,519.2 9.0
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 2640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMK32GX4M4B3600C16 8GB

Corsair CMK32GX4M4B3600C16 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMW16GX4M2K4266C19 8GB

Corsair CMW16GX4M2K4266C19 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Roa Logic BV iGame DDR4 8G 3000 8GB

Roa Logic BV iGame DDR4 8G 3000 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTZR 8GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CMW16GX4M2D3000C16 8GB

Corsair CMW16GX4M2D3000C16 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB