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Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 18ASF1G72PZ-2G1AV 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology 18ASF1G72PZ-2G1AV 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 60
    左右 23% 更低的延时
Micron Technology 18ASF1G72PZ-2G1AV 8GB 需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1AV 8GB
报告一个错误
  • 更快的读取速度，GB/s
    6.4 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    4.2 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 3200
    左右 5.31 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 60
  • 读取速度，GB/s
    2,909.8 left arrow 6.4
  • 写入速度，GB/s
    1,519.2 left arrow 4.2
  • 内存带宽，mbps
    3200 left arrow 17000
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    241 left arrow 1400

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB RAM的比较

Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Samsung M386B4G70DM0-CMA4 32GB
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内存RAM
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内存RAM
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内存RAM
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Corsair CML16GX3M2A1600C10 8GB
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G Skill Intl F4-3200C16-16GTZKY 16GB
内存RAM
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Kingston 99U5702-025.A00G 8GB
内存RAM
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SK Hynix HMA81GU6DJR8N-VK 8GB
内存RAM
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Kingston 9965525-018.A00LF 4GB
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Corsair CMK8GX4M2B3200C16 4GB
内存RAM