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Samsung M3 78T3354BZ0-CCC 256MB
Mushkin MR[A/B]4U320GJJM8G 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Mushkin MR[A/B]4U320GJJM8G 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Mushkin MR[A/B]4U320GJJM8G 8GB

Mushkin MR[A/B]4U320GJJM8G 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.9
    测试中的平均数值
Mushkin MR[A/B]4U320GJJM8G 8GB 需要考虑的原因
Mushkin MR[A/B]4U320GJJM8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 46
    左右 -100% 更低的延时
  • 更快的写入速度，GB/s
    11.7 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 3200
    左右 5.31 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Mushkin MR[A/B]4U320GJJM8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 23
  • 读取速度，GB/s
    2,909.8 left arrow 16.9
  • 写入速度，GB/s
    1,519.2 left arrow 11.7
  • 内存带宽，mbps
    3200 left arrow 17000
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    241 left arrow 3034

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Mushkin MR[A/B]4U320GJJM8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Mushkin MR[A/B]4U320GJJM8G 8GB
Mushkin MR[A/B]4U320GJJM8G 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK32GX4M2B3200C16 16GB
Corsair CMK32GX4M2B3200C16 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston 9965669-017.A00G 16GB
Kingston 9965669-017.A00G 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9905700-012.A00G 8GB
Kingston 9905700-012.A00G 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMW16GX4M2Z4000C18 8GB
Corsair CMW16GX4M2Z4000C18 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
AMD R744G2606U1S 4GB
AMD R744G2606U1S 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Hewlett-Packard 7EH67AA# 8GB
Hewlett-Packard 7EH67AA# 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Transcend Information TS2GLH64V6B 16GB
Transcend Information TS2GLH64V6B 16GB
内存RAM