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Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) PSD432G32002S 32GB

Samsung M3 78T3354BZ0-CCC 256MB vs Patriot Memory (PDP Systems) PSD432G32002S 32GB

总分
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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Patriot Memory (PDP Systems) PSD432G32002S 32GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 53
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    2 left arrow 14.9
    测试中的平均数值
Patriot Memory (PDP Systems) PSD432G32002S 32GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD432G32002S 32GB
报告一个错误
  • 更快的写入速度，GB/s
    13.5 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 3200
    左右 8 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 53
  • 读取速度，GB/s
    2,909.8 left arrow 14.9
  • 写入速度，GB/s
    1,519.2 left arrow 13.5
  • 内存带宽，mbps
    3200 left arrow 25600
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2643

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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Crucial Technology BL8G32C16U4BL.M8FE1 8GB
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Kingston HP32D4S2S1ME-4 4GB
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G Skill Intl F4-3200C16-16GTZKW 16GB
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Team Group Inc. Vulcan-1600 4GB
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Avant Technology W642GU44J2320NC 16GB
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A-DATA Technology AD73I1C1674EV 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
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Kingston 99U5428-018.A00LF 8GB
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Micron Technology 16ATF2G64AZ-2G6E1 16GB
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SK Hynix HYMP112U64CP8-Y5 1GB
Panram International Corporation L421008G4C1528K34O8A 8GB
Panram International Corporation L421008G4C1528K34O8A 8
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Crucial Technology CT102464BA160B.M16 8GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
G Skill Intl F4-3466C16-8GTZSW 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Mushkin 99[2/7/4]205F 8GB
Mushkin 99[2/7/4]205F 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
G Skill Intl F4-3200C14-8GTZ 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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Corsair CMT32GX4M2C3600C18 16GB
内存RAM
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