Samsung M3 78T3354BZ0-CCC 256MB vs Patriot Memory (PDP Systems) PSD48G266682 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Patriot Memory (PDP Systems) PSD48G266682 8GB

Patriot Memory (PDP Systems) PSD48G266682 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 16.5

测试中的平均数值

Patriot Memory (PDP Systems) PSD48G266682 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD48G266682 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 46

左右 -15% 更低的延时
更快的写入速度，GB/s

11.0 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Patriot Memory (PDP Systems) PSD48G266682 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 40
读取速度，GB/s

2,909.8 16.5
写入速度，GB/s

1,519.2 11.0
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 2956

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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V-Color Technology Inc. TA48G30S815GK 8GB

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Kingston 9965525-140.A00LF 8GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3000C15-8GVR 8GB

G Skill Intl F4-3000C15-8GVR 8GB