Samsung M3 78T3354BZ0-CCC 256MB vs Ramaxel Technology RMUA5110MH78HAF-2666 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Ramaxel Technology RMUA5110MH78HAF-2666 8GB

Ramaxel Technology RMUA5110MH78HAF-2666 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 14.6

测试中的平均数值

Ramaxel Technology RMUA5110MH78HAF-2666 8GB

需要考虑的原因
Ramaxel Technology RMUA5110MH78HAF-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 46

左右 -28% 更低的延时
更快的写入速度，GB/s

7.8 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Ramaxel Technology RMUA5110MH78HAF-2666 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 36
读取速度，GB/s

2,909.8 14.6
写入速度，GB/s

1,519.2 7.8
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 2183

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2863EHS-CF7 1GB

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Crucial Technology CT102464BF160B-16F 8GB

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G Skill Intl F4-3200C14-8GTZRX 8GB

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Corsair CMK64GX4M2A2666C16 32GB

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Kingston 9905471-006.A00LF 4GB

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Crucial Technology CT16G4DFD8213.M16FA 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston KHX1600C9D3/8G 8GB

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Corsair CMT16GX4M2C3200C16 8GB

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Kingston KP223C-ELD 2GB

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Wilk Elektronik S.A. GR2666S464L19S/8G 8GB

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