Samsung M3 78T3354BZ0-CCC 256MB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 18.7

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 46

左右 -142% 更低的延时
更快的写入速度，GB/s

14.2 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 19
读取速度，GB/s

2,909.8 18.7
写入速度，GB/s

1,519.2 14.2
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 3220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C18-8GTZKW 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology CT8G4DFD824A.C16FDR2 8GB

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Corsair CMK64GX4M8Z2933C16 8GB

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Golden Empire CL15-15-15 D4-2666 4GB

Golden Empire CL15-15-15 D4-2666 4GB