Samsung M3 78T3354BZ0-CCC 256MB vs Transcend Information TS512MSH64V4H 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

Transcend Information TS512MSH64V4H 4GB

需要考虑的原因
Transcend Information TS512MSH64V4H 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 46

左右 -2% 更低的延时
更快的读取速度，GB/s

5.3 2

测试中的平均数值
更快的写入速度，GB/s

8.4 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Transcend Information TS512MSH64V4H 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 45
读取速度，GB/s

2,909.8 5.3
写入速度，GB/s

1,519.2 8.4
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 1535

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL8G32C16S4B.8FE 8GB

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PNY Electronics PNY 2GB

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EVGA 16G-D4-2400-MR 8GB

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Crucial Technology BLS8G4D240FSB.M16FBD 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Apacer Technology 78.B1GQB.4010B 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

V-Color Technology Inc. TL48G24S815RGB 8GB

V-Color Technology Inc. TL48G24S815RGB 8GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

Crucial Technology CT8G4DFS824A.M8FD 8GB