RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T3354BZ0-CCC 256MB
UMAX Technology D4-2133-4GB-512X8-L 4GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs UMAX Technology D4-2133-4GB-512X8-L 4GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
UMAX Technology D4-2133-4GB-512X8-L 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
更快的读取速度,GB/s
2
16
测试中的平均数值
需要考虑的原因
UMAX Technology D4-2133-4GB-512X8-L 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
46
左右 -92% 更低的延时
更快的写入速度,GB/s
11.5
1,519.2
测试中的平均数值
更高的内存带宽,mbps
17000
3200
左右 5.31 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
UMAX Technology D4-2133-4GB-512X8-L 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
24
读取速度,GB/s
2,909.8
16.0
写入速度,GB/s
1,519.2
11.5
内存带宽,mbps
3200
17000
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
3-3-3-12 / 400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
241
2432
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
UMAX Technology D4-2133-4GB-512X8-L 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T3354BZ0-CCC 256MB
UMAX Technology D4-2133-4GB-512X8-L 4GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung M378A2K43DB1-CVF 16GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
A-DATA Technology AD5U48008G-B 8GB
Samsung M471A2K43DB1-CWE 16GB
Kingston 9905783-025.A01G 16GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3600C17-4GVK 4GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMW64GX4M4A2666C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA81GR7MFR8N-UH 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Samsung M395T2863QZ4-CF76 1GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
PNY Electronics PNY 2GB
Corsair CMD32GX4M4C3466C16W 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology CT16G4SFD8266 16GB
SK Hynix HMT351S6BFR8C-H9 4GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-2666C15-8GVB 8GB
报告一个错误
×
Bug description
Source link