Samsung M3 78T5663EH3-CF7 2GB vs Kingston 9905599-020.A00G 8GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Kingston 9905599-020.A00G 8GB

Kingston 9905599-020.A00G 8GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值

Kingston 9905599-020.A00G 8GB

需要考虑的原因
Kingston 9905599-020.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 -160% 更低的延时
更快的写入速度，GB/s

9.5 2,451.8

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Kingston 9905599-020.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 25
读取速度，GB/s

4,605.9 14.5
写入速度，GB/s

2,451.8 9.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 2515

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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AMD R5316G1609U2K 8GB

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AMD R748G2133U2S 8GB

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Mushkin 99[2/7/4]202F 4GB

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Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Corsair CMK64GX4M4A2400C16 16GB

Corsair CMK64GX4M4A2400C16 16GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M393A2K43DB3-CWE 16GB

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Kingston 99U5469-045.A00LF 4GB

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