Samsung M3 78T5663RZ3-CE6 2GB vs A-DATA Technology 11137401 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

A-DATA Technology 11137401 8GB

A-DATA Technology 11137401 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 15.1

测试中的平均数值

A-DATA Technology 11137401 8GB

需要考虑的原因
A-DATA Technology 11137401 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 60

左右 -50% 更低的延时
更快的写入速度，GB/s

7.3 2,168.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

A-DATA Technology 11137401 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 40
读取速度，GB/s

4,595.2 15.1
写入速度，GB/s

2,168.2 7.3
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 1921

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T3354BZ0-CCC 256MB

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SK Hynix HMA451U6MFR8N-TF 4GB

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Team Group Inc. ZEUS-2133 8GB

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InnoDisk Corporation M4S0-4GSSNCSJ 4GB

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Kingston 9965525-140.A00LF 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Micron Technology 16ATF4G64HZ-3G2E2 32GB

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A-DATA Technology DDR4 2400 16GB

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Smart Modular SMS4WEC8C2K0446FCG 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

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Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB