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Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 78.BAGN8.AZC0B 4GB

Samsung M3 78T5663RZ3-CE6 2GB vs Apacer Technology 78.BAGN8.AZC0B 4GB

总分
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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Apacer Technology 78.BAGN8.AZC0B 4GB

Apacer Technology 78.BAGN8.AZC0B 4GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    60 left arrow 71
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 15.9
    测试中的平均数值
Apacer Technology 78.BAGN8.AZC0B 4GB 需要考虑的原因
Apacer Technology 78.BAGN8.AZC0B 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.0 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 78.BAGN8.AZC0B 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 71
  • 读取速度，GB/s
    4,595.2 left arrow 15.9
  • 写入速度，GB/s
    2,168.2 left arrow 8.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    941 left arrow 1768

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Apacer Technology 78.BAGN8.AZC0B 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 78.BAGN8.AZC0B 4GB
Apacer Technology 78.BAGN8.AZC0B 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
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内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
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Nanya Technology M2F4G64CB8HB9N-CG 4GB
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G Skill Intl F4-2800C15-4GVR 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-3600C16-32GTZR 32GB
内存RAM
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内存RAM
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内存RAM
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Transcend Information JM3200HLB-8G 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
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内存RAM
Kingston 9965516-430.A00G 16GB
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内存RAM
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Kreton Corporation 51624xxxx68x35xxxx 2GB
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Micron Technology 8ATF1G64AZ-2G6D1 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
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Samsung M393A2K40BB2-CTD 16GB
内存RAM