Samsung M3 78T5663RZ3-CE6 2GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 18.2

测试中的平均数值
更快的写入速度，GB/s

2,168.2 17.3

测试中的平均数值

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

需要考虑的原因
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 60

左右 -131% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 26
读取速度，GB/s

4,595.2 18.2
写入速度，GB/s

2,168.2 17.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

941 3938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T5663RZ3-CE6 2GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Kingston 99U5474-037.A00LF 4GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Corsair CMD32GX4M2C3200C14T 16GB

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Crucial Technology CT4G4DFS824A.C8FE 4GB

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Corsair CMN32GX4M2Z3600C18 16GB

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Kllisre M471A1K43CB1-CTD 8GB

Kllisre M471A1K43CB1-CTD 8GB