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Samsung M3 78T5663RZ3-CE6 2GB
Corsair CM4B8G1J2400A16K2-O 8GB
比较
Samsung M3 78T5663RZ3-CE6 2GB vs Corsair CM4B8G1J2400A16K2-O 8GB
总分
Samsung M3 78T5663RZ3-CE6 2GB
总分
Corsair CM4B8G1J2400A16K2-O 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
4
17.8
测试中的平均数值
更快的写入速度,GB/s
2,168.2
12.7
测试中的平均数值
需要考虑的原因
Corsair CM4B8G1J2400A16K2-O 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
60
左右 -122% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CM4B8G1J2400A16K2-O 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
27
读取速度,GB/s
4,595.2
17.8
写入速度,GB/s
2,168.2
12.7
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
941
3129
Samsung M3 78T5663RZ3-CE6 2GB RAM的比较
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Corsair CM4B8G1J2400A16K2-O 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CM4B8G1J2400A16K2-O 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CM4X16GE2400C14K4 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-2800C15-8GRK 8GB
Kingston 99U5474-023.A00LF 4GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3600C14-8GTZRA 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KHX2133C13D4/8GX 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMK32GX4M2E3200C16 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C16-16GTZKY 16GB
报告一个错误
×
Bug description
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