Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology 16G4UD2400.C16BD1 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值
更快的写入速度，GB/s

2,168.2 10.4

测试中的平均数值

Crucial Technology 16G4UD2400.C16BD1 16GB

需要考虑的原因
Crucial Technology 16G4UD2400.C16BD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 60

左右 -150% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology 16G4UD2400.C16BD1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 24
读取速度，GB/s

4,595.2 15.5
写入速度，GB/s

2,168.2 10.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 2654

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology 16G4UD2400.C16BD1 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

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Corsair CM4X8GD3000C16K4D 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Kingston 9905630-018.A00G 8GB

Kingston HP698651-154-MCN 8GB

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Micron Technology 8ATF1G64AZ-2G6D1 8GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Samsung M471B5173QH0-YK0 4GB

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Patriot Memory (PDP Systems) 2666 C18 Series 16GB

Patriot Memory (PDP Systems) 2666 C18 Series 16GB