SK Hynix HMT351R7EFR8C-RD 4GB vs Micron Technology 18ASF1G72PDZ-2G6E1 8GB

总分

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

总分

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

差异规格评论

差异

SK Hynix HMT351R7EFR8C-RD 4GB

需要考虑的原因
SK Hynix HMT351R7EFR8C-RD 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 44

左右 16% 更低的延时

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G6E1 8GB

报告一个错误

更快的读取速度，GB/s

10.6 9.8

测试中的平均数值
更快的写入速度，GB/s

8.8 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 14900

左右 1.43 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT351R7EFR8C-RD 4GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 44
读取速度，GB/s

9.8 10.6
写入速度，GB/s

7.2 8.8
内存带宽，mbps

14900 21300

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-10-9-28 / 1866 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2065 2374

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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