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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
54
左右 56% 更低的延时
更快的读取速度,GB/s
15.5
9.3
测试中的平均数值
更快的写入速度,GB/s
11.0
7.3
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
54
读取速度,GB/s
15.5
9.3
写入速度,GB/s
11.0
7.3
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2445
1904
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
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Samsung M3 78T3354BZ0-CCC 256MB
Smart Modular SF4641G8CKHIWDFSEG 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
报告一个错误
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