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Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CB8GU2666.C8ET 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology CB8GU2666.C8ET 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Crucial Technology CB8GU2666.C8ET 8GB

Crucial Technology CB8GU2666.C8ET 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 10.1
    测试中的平均数值
Crucial Technology CB8GU2666.C8ET 8GB 需要考虑的原因
Crucial Technology CB8GU2666.C8ET 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 60
    左右 -71% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CB8GU2666.C8ET 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 35
  • 读取速度，GB/s
    4,595.2 left arrow 15.0
  • 写入速度，GB/s
    2,168.2 left arrow 10.1
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    941 left arrow 2636

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Crucial Technology CB8GU2666.C8ET 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP32D4U8S8HC-8XR 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
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内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
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内存RAM
Kingston 99U5428-063.A00LF 8GB
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Elpida EBE21UE8ACUA-8G-E 2GB
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Essencore Limited KD48GU88C-26N1600 8GB
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G Skill Intl F4-3600C18-32GTZN 32GB
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Samsung M393B1G70BH0-CK0 8GB
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内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-2400C15-4GVR 4GB
G Skill Intl F4-2400C15-4GVR 4GB
内存RAM
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Kingston KHX2133C11D3/4GX 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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Chun Well Technology Holding Limited CL19-19-19 D4-2666
内存RAM
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Kreton Corporation 51624xxxx68x35xxxx 2GB
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Kingston 99U5702-020.A00G 8GB
内存RAM
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Micron Technology 18HTF12872AY-800F1 1GB
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SK Hynix HMA41GU6MFR8N-TF 8GB
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