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Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology CT8G4DFRA32A.C4FE 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Crucial Technology CT8G4DFRA32A.C4FE 8GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 10.8
    测试中的平均数值
Crucial Technology CT8G4DFRA32A.C4FE 8GB 需要考虑的原因
Crucial Technology CT8G4DFRA32A.C4FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 60
    左右 -76% 更低的延时
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 34
  • 读取速度，GB/s
    4,595.2 left arrow 16.4
  • 写入速度，GB/s
    2,168.2 left arrow 10.8
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    941 left arrow 2881

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Crucial Technology CT8G4DFRA32A.C4FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Transcend Information TS1GLH64V4H 8GB
Transcend Information TS1GLH64V4H 8GB
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Kingston HP698651-154-MCN 8GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
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内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
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Patriot Memory (PDP Systems) PSD48G213381 8GB
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Corsair CM2X1024-6400C4 1GB
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