Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology CT8G4SFD824A.C16FF 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 16.1

测试中的平均数值
更快的写入速度，GB/s

2,168.2 11.2

测试中的平均数值

Crucial Technology CT8G4SFD824A.C16FF 8GB

需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FF 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 60

左右 -107% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 29
读取速度，GB/s

4,595.2 16.1
写入速度，GB/s

2,168.2 11.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 2916

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Kingston KHX2400C11D3/4GX 4GB

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Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB

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A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Kingston KHX3200C16D4/8GX 8GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMSO16GX4M2A2133C15 8GB

Corsair CMSO16GX4M2A2133C15 8GB