Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-2800C15-8GVR 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

G Skill Intl F4-2800C15-8GVR 8GB

G Skill Intl F4-2800C15-8GVR 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值
更快的写入速度，GB/s

2,168.2 13.5

测试中的平均数值

G Skill Intl F4-2800C15-8GVR 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 60

左右 -122% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-2800C15-8GVR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 27
读取速度，GB/s

4,595.2 17.9
写入速度，GB/s

2,168.2 13.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

941 3396

RAM Latency Calculator

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Corsair CMY16GX3M4A2133C8 4GB

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Micron Technology 8ATF1G64AZ-2G6J1 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

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Ramaxel Technology RMSA3260ME78HAF-2666 8GB

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AMD R538G1601U2S 8GB

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Apacer Technology GD2.1527CS.001 8GB

Apacer Technology GD2.1527CS.001 8GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

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Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB