Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-3000C15-8GVS 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

G Skill Intl F4-3000C15-8GVS 8GB

G Skill Intl F4-3000C15-8GVS 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 18.9

测试中的平均数值
更快的写入速度，GB/s

2,168.2 14.7

测试中的平均数值

G Skill Intl F4-3000C15-8GVS 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GVS 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 60

左右 -122% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3000C15-8GVS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 27
读取速度，GB/s

4,595.2 18.9
写入速度，GB/s

2,168.2 14.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

941 3418

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C14-8GTZ 8GB

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Kingston 9965525-140.A00LF 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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G Skill Intl F4-3000C15-8GVS 8GB

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Kingmax Semiconductor FLFF65F-C8KM9 4GB

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SK Hynix GKE160UD102408-2133 16GB

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Kingston KF2666C16D4/16G 16GB

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Essencore Limited KD4AGS88A-26N1600 16GB

PNY Electronics PNY 2GB

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Mushkin MR[A/B]4U300JJJM16G 16GB

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Crucial Technology CT8G4DFS824A.M8FB 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Essencore Limited KD4AGU880-36A180C 16GB

Essencore Limited KD4AGU880-36A180C 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston 9905663-021.A00G 16GB

Kingston 9905663-021.A00G 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMW16GX4M2Z2933C16 8GB

Corsair CMW16GX4M2Z2933C16 8GB