Samsung M3 78T5663RZ3-CE6 2GB vs Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值
更快的写入速度，GB/s

2,168.2 13.0

测试中的平均数值

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 60

左右 -140% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 25
读取速度，GB/s

4,595.2 14.5
写入速度，GB/s

2,168.2 13.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 3377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3600C14-8GTRSB 8GB

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Kingston 9905584-016.A00LF 4GB

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Crucial Technology CT8G4SFD824A.M16FB 8GB

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Corsair CMK8GX4M1Z3600C18 8GB

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Crucial Technology CT51264BF160BJ.M8F 4GB

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V-Color Technology Inc. TA48G36S818BN 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Kingston HP24D4R7D4MAM-32 32GB

Kingston HP24D4R7D4MAM-32 32GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Patriot Memory (PDP Systems) 3600 C18 Series 32GB

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Kingston HP536727-H41-ELD 4GB

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Kingston 9965643-006.A01G 8GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB