RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire CL15-15-15 D4-3000 8GB
比较
Samsung M3 78T5663RZ3-CE6 2GB vs Golden Empire CL15-15-15 D4-3000 8GB
总分
Samsung M3 78T5663RZ3-CE6 2GB
总分
Golden Empire CL15-15-15 D4-3000 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
4
13.8
测试中的平均数值
更快的写入速度,GB/s
2,168.2
10.4
测试中的平均数值
需要考虑的原因
Golden Empire CL15-15-15 D4-3000 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
60
左右 -131% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire CL15-15-15 D4-3000 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
26
读取速度,GB/s
4,595.2
13.8
写入速度,GB/s
2,168.2
10.4
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
941
2691
Samsung M3 78T5663RZ3-CE6 2GB RAM的比较
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Golden Empire CL15-15-15 D4-3000 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire CL15-15-15 D4-3000 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Kingston 99U5474-038.A00LF 4GB
Shenzhen Xingmem Technology Corp 16GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-16GTRSB 16GB
Kingston 9965433-034.A00LF 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS8213.M8FH 8GB
Kingston 9905403-437.A01LF 4GB
Maxsun MSD48G30M3 8GB
A-DATA Technology DDR3 1600 4GB
Corsair CMK16GX4M4B3600C18 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Samsung M471B1G73DB0-YK0 8GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378B5273CH0-CH9 4GB
Kingston 9905630-039.A00G 16GB
报告一个错误
×
Bug description
Source link