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Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905624-007.A00G 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Kingston 9905624-007.A00G 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Kingston 9905624-007.A00G 8GB

Kingston 9905624-007.A00G 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.8
    测试中的平均数值
Kingston 9905624-007.A00G 8GB 需要考虑的原因
Kingston 9905624-007.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 60
    左右 -150% 更低的延时
  • 更快的写入速度，GB/s
    6.7 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905624-007.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 24
  • 读取速度，GB/s
    4,595.2 left arrow 13.8
  • 写入速度，GB/s
    2,168.2 left arrow 6.7
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    941 left arrow 2168

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Kingston 9905624-007.A00G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2400C15D4/4G 4GB
Kingston KHX2400C15D4/4G 4GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3200C16-4GRKD 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905624-007.A00G 8GB
Kingston 9905624-007.A00G 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
SK Hynix HMA851U6DJR6N-XN 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMK64GX4M4D3600C18 16GB
Corsair CMK64GX4M4D3600C18 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Mushkin 99[2/7/4]204F 4GB
Mushkin 99[2/7/4]204F 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.CAGR4.40C0B 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KHX2400C15D4/4G 4GB
Kingston KHX2400C15D4/4G 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9965596-016.B01G 8GB
Kingston 9965596-016.B01G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
内存RAM
Corsair CMG32GX4M2D3600C18 16GB
Corsair CMG32GX4M2D3600C18 16GB
Corsair CMH32GX4M2D3600C18 16GB
Corsair CMH32GX4M2D3600C18 16GB
内存RAM