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Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Micron Technology 4ATF1G64HZ-3G2E1 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.1
    测试中的平均数值
Micron Technology 4ATF1G64HZ-3G2E1 8GB 需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2E1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 60
    左右 -71% 更低的延时
  • 更快的写入速度，GB/s
    9.6 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 35
  • 读取速度，GB/s
    4,595.2 left arrow 15.1
  • 写入速度，GB/s
    2,168.2 left arrow 9.6
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    941 left arrow 2502

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMSX32GX4M1A2666C18 32GB
Corsair CMSX32GX4M1A2666C18 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-4000C18-16GVK 16GB
G Skill Intl F4-4000C18-16GVK 16GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Corsair CMR16GX4M2D3000C16 8GB
Corsair CMR16GX4M2D3000C16 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
内存RAM
SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston 9965662-018.A00G 32GB
Kingston 9965662-018.A00G 32GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMK16GX4M4A2800C16 4GB
Corsair CMK16GX4M4A2800C16 4GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
A-DATA Technology DDR4 4133 2OZ 8GB
A-DATA Technology DDR4 4133 2OZ 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CMWX8GD3200C16W4 8GB
Corsair CMWX8GD3200C16W4 8GB
内存RAM