Samsung M3 78T5663RZ3-CE6 2GB vs Micron Technology 8ATF1G64AZ-2G3H1 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值
更快的写入速度，GB/s

2,168.2 10.5

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G3H1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3H1 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 60

左右 -67% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 36
读取速度，GB/s

4,595.2 14.9
写入速度，GB/s

2,168.2 10.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 2589

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905403-156.A00LF 2GB

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Apacer Technology 78.B1GET.AU00C 4GB

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SK Hynix GKE160UD102408-2133 16GB

Kingston KHX318C10FR/8G 8GB

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Corsair CMH16GX4M2D3600C18 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Avant Technology W641GU67J5213N8 8GB

Avant Technology W641GU67J5213N8 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.CAGP7.4020B 8GB

Apacer Technology 78.CAGP7.4020B 8GB