Samsung M3 78T5663RZ3-CE6 2GB vs Mushkin 99[2/7/4]204F 4GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Mushkin 99[2/7/4]204F 4GB

Mushkin 99[2/7/4]204F 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 13.4

测试中的平均数值
更快的写入速度，GB/s

2,168.2 11.5

测试中的平均数值

Mushkin 99[2/7/4]204F 4GB

需要考虑的原因
Mushkin 99[2/7/4]204F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 60

左右 -140% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Mushkin 99[2/7/4]204F 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 25
读取速度，GB/s

4,595.2 13.4
写入速度，GB/s

2,168.2 11.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

941 2825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4SFS824A.C8FDD1 8GB

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Team Group Inc. Team-Elite-1333 4GB

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Patriot Memory (PDP Systems) 3600 C17 Series 4GB

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Apacer Technology 78.01GA0.9K5 1GB

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Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

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Mushkin MR[A/B]280HHHH16G 16GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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G Skill Intl F4-3600C14-16GVK 16GB

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Crucial Technology BLS8G4D240FSC.16FBD 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB