Samsung M3 78T5663RZ3-CE6 2GB vs Panram International Corporation PUD42400C154G2NJK 4GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 13.5

测试中的平均数值

Panram International Corporation PUD42400C154G2NJK 4GB

需要考虑的原因
Panram International Corporation PUD42400C154G2NJK 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 60

左右 -131% 更低的延时
更快的写入速度，GB/s

8.3 2,168.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Panram International Corporation PUD42400C154G2NJK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 26
读取速度，GB/s

4,595.2 13.5
写入速度，GB/s

2,168.2 8.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

941 2157

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT16GX4M2Z3200C16 8GB

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G Skill Intl F4-3200C16-8GVRB 8GB

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Crucial Technology BL8G26C16U4R.8FD 8GB

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G Skill Intl F4-2800C14-16GVK 16GB

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Corsair CMWX8GD3600C18W4 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N

Crucial Technology CT51264BD160B.C16F 4GB

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Avant Technology W641GU42J9266NB 8GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB

Wilk Elektronik S.A. GR2666D464L19S/4G 4GB