RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA82GR7AFR4N-TF 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs SK Hynix HMA82GR7AFR4N-TF 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
SK Hynix HMA82GR7AFR4N-TF 16GB

SK Hynix HMA82GR7AFR4N-TF 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    60 left arrow 66
    左右 9% 更低的延时
SK Hynix HMA82GR7AFR4N-TF 16GB 需要考虑的原因
SK Hynix HMA82GR7AFR4N-TF 16GB
报告一个错误
  • 更快的读取速度，GB/s
    7.9 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.0 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA82GR7AFR4N-TF 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 66
  • 读取速度，GB/s
    4,595.2 left arrow 7.9
  • 写入速度，GB/s
    2,168.2 left arrow 7.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    941 left arrow 1862

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

SK Hynix HMA82GR7AFR4N-TF 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-2800C16-4GRR 4GB
G Skill Intl F4-2800C16-4GRR 4GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA82GR7AFR4N-TF 16GB
SK Hynix HMA82GR7AFR4N-TF 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMSX8GX4M2A2666C18 4GB
Corsair CMSX8GX4M2A2666C18 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
内存RAM
Strontium EVMT8G1600U86S 8GB
Strontium EVMT8G1600U86S 8GB
Apacer Technology 78.DAGRL.4050C 16GB
Apacer Technology 78.DAGRL.4050C 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9905713-008.A00G 4GB
Kingston 9905713-008.A00G 4GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Crucial Technology CT4G4SFS824A.C8FF 4GB
Crucial Technology CT4G4SFS824A.C8FF 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Gloway International (HK) STK4U2400D15082C 8GB
Gloway International (HK) STK4U2400D15082C 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMK8GX4M1A2666C16 8GB
Corsair CMK8GX4M1A2666C16 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMR32GX4M2C3000C16 16GB
Corsair CMR32GX4M2C3000C16 16GB
内存RAM