Samsung M3 78T5663RZ3-CE6 2GB vs Teikon TMA451S6AFR8N-TFSC 4GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Teikon TMA451S6AFR8N-TFSC 4GB

Teikon TMA451S6AFR8N-TFSC 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 14.6

测试中的平均数值
更快的写入速度，GB/s

2,168.2 11.5

测试中的平均数值

Teikon TMA451S6AFR8N-TFSC 4GB

需要考虑的原因
Teikon TMA451S6AFR8N-TFSC 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 60

左右 -94% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Teikon TMA451S6AFR8N-TFSC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 31
读取速度，GB/s

4,595.2 14.6
写入速度，GB/s

2,168.2 11.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

941 2199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4B16G4J2400A16K2-O 16GB

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A-DATA Technology DQVE1908 512MB

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Kingston 9905678-065.A00G 8GB

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Samsung M393B1K70CH0-YH9 8GB

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Corsair CMWX16GC3200C16W2E 16GB

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Asgard VMA45UH-MEC1U2AW2 16GB

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Crucial Technology BLS8G4D240FSA.16FBD 8GB

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Kingston 99U5584-001.A00LF 4GB

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Crucial Technology CT8G4SFRA32A.M8FJ 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB