Samsung M3 78T5663RZ3-CF7 2GB vs Avexir Technologies Corporation T 4GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Avexir Technologies Corporation T 4GB

Avexir Technologies Corporation T 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值
更快的写入速度，GB/s

2,784.6 13.4

测试中的平均数值

Avexir Technologies Corporation T 4GB

需要考虑的原因
Avexir Technologies Corporation T 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 65

左右 -210% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Avexir Technologies Corporation T 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 21
读取速度，GB/s

4,806.8 18.0
写入速度，GB/s

2,784.6 13.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

932 2801

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Mushkin 99[2/7/4]204[F/T] 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Avexir Technologies Corporation T 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Corsair CMW16GX4M2Z3200C16 8GB

Corsair CMW16GX4M2Z3200C16 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMD16GX4M2B3200C16 8GB

Corsair CMD16GX4M2B3200C16 8GB