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Samsung M3 78T5663RZ3-CF7 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
比较
Samsung M3 78T5663RZ3-CF7 2GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
总分
Samsung M3 78T5663RZ3-CF7 2GB
总分
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
更快的读取速度,GB/s
4
18.1
测试中的平均数值
更快的写入速度,GB/s
2,784.6
15.6
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
65
左右 -132% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
28
读取速度,GB/s
4,806.8
18.1
写入速度,GB/s
2,784.6
15.6
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
932
3693
Samsung M3 78T5663RZ3-CF7 2GB RAM的比较
Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3000C16-8GTZR 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-4000C16-16GVK 16GB
Kingston 99U5471-052.A00LF 8GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
AMD R748G2133U2S 8GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-2400C15-4GVR 4GB
Apacer Technology 78.01G86.9H50C 1GB
Transcend Information JM3200HLE-16G 16GB
Kingston 99U5474-010.A00LF 2GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M471A5143EB1-CRC 4GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Kingston 9905458-017.A01LF 4GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
SK Hynix DDR2 800 2G 2GB
Kingston KCDT82-MIE 4GB
报告一个错误
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Bug description
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